首页> 外文OA文献 >SiC and Si\u3csub\u3e3\u3c/sub\u3eN\u3csub\u3e4\u3c/sub\u3e recession due to SiO\u3csub\u3e2\u3c/sub\u3e scale volatility under combustor conditions
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SiC and Si\u3csub\u3e3\u3c/sub\u3eN\u3csub\u3e4\u3c/sub\u3e recession due to SiO\u3csub\u3e2\u3c/sub\u3e scale volatility under combustor conditions

机译:siC和si \ u3csub \ u3e3 \ u3c / sub \ u3eN \ u3csub \ u3e4 \ u3c / sub \ u3e由于siO \ u3csub \ u3e2 \ u3c / sub \ u3e在燃烧器条件下的氧化皮挥发

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摘要

SiC and Si3N4 materials were tested under various turbine engine combustion environments, chosen to represent either conventional fuel-lean or fuel-rich mixtures proposed for high speed aircraft. Representative CVD, sintered, and composite materials were evaluated in both furnace and high pressure burner rig exposure. While protective SiO2 scales form in all cases, evidence is presented to support paralinear growth kinetics, i.e. parabolic growth moderated simultaneously by linear volatilization. The volatility rate is dependent on temperature, moisture content, system pressure, and gas velocity. The burner tests were used to map SiO2 volatility (and SiC recession) over a range of temperature, pressure, and velocity. The functional dependency of material recession (volatility) that emerged followed the form: exp(-Q/RT) * Px * vy. These empirical relations were compared to rates predicted from the thermodynamics of volatile SiO and SiOxHv reaction products and a kinetic model of diffusion through a moving boundary layer. For typical combustion conditions, recession of 0.2 to 2 μm/h is predicted at 1200-1400°C, far in excess of acceptable long term limits.
机译:在各种涡轮发动机燃烧环境下对SiC和Si3N4材料进行了测试,这些材料被选择代表用于高速飞机的常规稀燃料或富燃料混合物。在熔炉和高压燃烧器装置的暴露环境中评估了代表性的CVD,烧结和复合材料。尽管在所有情况下都会形成保护性的SiO2氧化皮,但已提供证据支持平行线性生长动力学,即通过线性挥发同时缓和的抛物线生长。挥发率取决于温度,水分含量,系统压力和气体速度。燃烧器测试用于绘制在一定温度,压力和速度范围内的SiO2挥发性(和SiC凹陷)。出现的物质衰退(波动性)的功能依赖性遵循以下形式:exp(-Q / RT)* Px * vy。将这些经验关系与根据挥发性SiO和SiOxHv反应产物的热力学以及通过移动边界层扩散的动力学模型预测的速率进行了比较。对于典型的燃烧条件,预计在1200-1400°C时回缩为0.2至2μm/ h,远远超过了可接受的长期限制。

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